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Stress-induced anomalous shift of optical band gap in ZnO:Al thin films
Thickness-dependent stress relaxation and its unreported effect on optical band gap of Al-doped ZnO thin films have been investigated. The thinnest film ( ∼ 84 nm ) had a stress of − 8.39 × 10 9 Nm − 2 , carrier concentration of 1.73 × 10 19 cm − 3 and optical band gap of 3.69 eV, a value sign...
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Published in: | Applied physics letters 2009-08, Vol.95 (6), p.062103-062103-3 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Thickness-dependent stress relaxation and its unreported effect on optical band gap of Al-doped ZnO thin films have been investigated. The thinnest film
(
∼
84
nm
)
had a stress of
−
8.39
×
10
9
Nm
−
2
, carrier concentration of
1.73
×
10
19
cm
−
3
and optical band gap of 3.69 eV, a value significantly higher than the reported ones. With increase in thickness, magnitude of the stress decreased, and correspondingly a redshift of fundamental absorption band edge was observed. A linear dependence of optical band gap on stress in the films with a coefficient of 54.6 meV/GPa has been observed. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3202399 |