Stress-induced anomalous shift of optical band gap in ZnO:Al thin films

Thickness-dependent stress relaxation and its unreported effect on optical band gap of Al-doped ZnO thin films have been investigated. The thinnest film ( ∼ 84   nm ) had a stress of − 8.39 × 10 9   Nm − 2 , carrier concentration of 1.73 × 10 19   cm − 3 and optical band gap of 3.69 eV, a value sign...

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Published in:Applied physics letters 2009-08, Vol.95 (6), p.062103-062103-3
Main Authors: Mohanty, Bhaskar Chandra, Jo, Yeon Hwa, Yeon, Deuk Ho, Choi, Ik Jin, Cho, Yong Soo
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description Thickness-dependent stress relaxation and its unreported effect on optical band gap of Al-doped ZnO thin films have been investigated. The thinnest film ( ∼ 84   nm ) had a stress of − 8.39 × 10 9   Nm − 2 , carrier concentration of 1.73 × 10 19   cm − 3 and optical band gap of 3.69 eV, a value significantly higher than the reported ones. With increase in thickness, magnitude of the stress decreased, and correspondingly a redshift of fundamental absorption band edge was observed. A linear dependence of optical band gap on stress in the films with a coefficient of 54.6 meV/GPa has been observed.
doi_str_mv 10.1063/1.3202399
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title Stress-induced anomalous shift of optical band gap in ZnO:Al thin films
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