Thin-film interdiffusion. II. Ti-Rh, Ti-Pt, Ti-Rh-Au, and Ti-Au-Rh

Interdiffusion in the Ti/Rh/Au and Ti/Pt thin-film systems is measured using Rutherford backscattering. Extensive grain size measurements are used to interpret the data in terms of grain-boundary-assisted bulk diffusion. At room temperature, rapid grain-boundary diffusion of Au into the fine-grained...

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Bibliographic Details
Published in:Journal of applied physics 1975-10, Vol.46 (10), p.4284-4290
Main Authors: DeBonte, W. J., Poate, J. M., Melliar-Smith, C. M., Levesque, R. A.
Format: Article
Language:English
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Summary:Interdiffusion in the Ti/Rh/Au and Ti/Pt thin-film systems is measured using Rutherford backscattering. Extensive grain size measurements are used to interpret the data in terms of grain-boundary-assisted bulk diffusion. At room temperature, rapid grain-boundary diffusion of Au into the fine-grained Rh layer of the Ti-Rh-Au films occurs, characterized by a diffusion coefficient DB∼10−16 cm2/sec. The bulk diffusion of Au into the grains of the Rh film layer is examined using the grain-boundary-assisted bulk diffusion model, and the influence of surface segregation and size effects is discussed. It is found that interdiffusion in Ti-Rh and Ti-Pt couples is much slower than in Ti-Pd or Ti-Au. Methods are suggested by which the utility of Ti-Rh-Au as a conductor metallization might be improved.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.321448