Three-dimensional spin structure in exchange-biased antiferromagnetic/ferromagnetic thin films

A coexistence of lateral and in-depth domain walls in antiferromagnet/ferromagnet (AF/FM) thin films exhibiting double hysteresis loops (DHLs) is demonstrated. Comparison of single and DHLs together with local and global measurements confirms the formation of two oppositely oriented domains in the A...

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Bibliographic Details
Published in:Applied physics letters 2009-08, Vol.95 (9), p.092503-092503-3
Main Authors: Morales, R., Vélez, M., Petracic, O., Roshchin, Igor V., Li, Z.-P., Batlle, X., Alameda, J. M., Schuller, Ivan K.
Format: Article
Language:English
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Summary:A coexistence of lateral and in-depth domain walls in antiferromagnet/ferromagnet (AF/FM) thin films exhibiting double hysteresis loops (DHLs) is demonstrated. Comparison of single and DHLs together with local and global measurements confirms the formation of two oppositely oriented domains in the AF that imprint a lateral domain structure into the FM layer. Most significantly, the magnetization reversal mechanism within each opposite domain takes place by incoherent rotation of spring-like domain walls extending through the Ni thickness. Therefore, complex three-dimensional domain walls are created perpendicular and parallel to the AF/FM interface in exchange biased systems.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3216055