Preparation of polished substrates of BaF2

The utilization of Pb1−xSnxTe epitaxial films in high-density forward-looking infrared (FLIR) arrays has been hampered thus far by cleavage steps in the substrates. We have developed a chemical-mechanical polishing technique for the (111) surface of BaF2 which leaves this substrate material single c...

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Bibliographic Details
Published in:Journal of applied physics 1976-01, Vol.47 (2), p.736-740
Main Authors: Bis, R. F., Farabaugh, E. N., Muth, E. P.
Format: Article
Language:English
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Summary:The utilization of Pb1−xSnxTe epitaxial films in high-density forward-looking infrared (FLIR) arrays has been hampered thus far by cleavage steps in the substrates. We have developed a chemical-mechanical polishing technique for the (111) surface of BaF2 which leaves this substrate material single crystal and almost damage free. X-ray data on the polished BaF2 and the Pb0.8Sn0.2Te epitaxial film indicate single-crystal surfaces with very little damage. Furthermore, the electrical properties of the Pb0.8Sn0.2Te epitaxial film are sufficient for FLIR applications.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.322617