Hall mobility in CdGe x As2 glasses

Electrical-conductivity and Hall-effect measurements were performed on CdGexAs2 glasses with a Ge content of (1/8) M, (1/6) M, and (1/4) M, respectively, in the temperature range 200–550 °K. The experimental data show that the temperature dependence of the Hall mobility in the CdGexAs2 glasses studi...

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Bibliographic Details
Published in:Journal of applied physics 1976-02, Vol.47 (2), p.685-688
Main Authors: Meimaris, D., Katsika, V., Roilos, M.
Format: Article
Language:English
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Summary:Electrical-conductivity and Hall-effect measurements were performed on CdGexAs2 glasses with a Ge content of (1/8) M, (1/6) M, and (1/4) M, respectively, in the temperature range 200–550 °K. The experimental data show that the temperature dependence of the Hall mobility in the CdGexAs2 glasses studied does not resemble that reported for chalcogenide glasses. The observed variation of the Hall mobility with temperature is possibly consistent with conduction occurring by variable-range hopping in localized states both at the band edge and the Fermi level, the latter being expected to contribute mainly at low temperatures.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.322634