Distribution of dopant in SiO2-Si

The distribution of dopant in SiO2-Si during dry thermal oxidation and postoxidation anneal is studied. Analytical expressions for the distribution functions are derived, on the assumptions that the oxide film grows in accordance with the t1/2 law and that before oxidation the dopant is uniformly di...

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Bibliographic Details
Published in:Journal of applied physics 1976-01, Vol.47 (7), p.3159-3166
Main Authors: Av-Ron, M., Shatzkes, M., Burkhardt, P. J., Cadoff, I.
Format: Article
Language:English
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Summary:The distribution of dopant in SiO2-Si during dry thermal oxidation and postoxidation anneal is studied. Analytical expressions for the distribution functions are derived, on the assumptions that the oxide film grows in accordance with the t1/2 law and that before oxidation the dopant is uniformly distributed in the silicon. Cases in which tn≠t1/2 are discussed, with particular attention to the effect of n≳1/2 on the distribution of the dopant in the oxide. Calculations are provided for boron, describing its distribution in the oxide and in the silicon as a function of postoxidation anneal. Some experimental results concerning the distribution of boron in the silicon are provided for various oxide thicknesses, oxidation temperatures, and anneal times. These results were obtained from spreading-resistance measurements.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.323110