In-depth resolved Raman scattering analysis of secondary phases in Cu-poor CuInSe2 based thin films

Raman scattering analysis of Cu-poor CuInSe2 layers shows the coexistence of the ordered vacancy compound (OVC), CuAu–CuInSe2 and chalcopyrite (CH) CuInSe2 phases as function of the Cu/In content ratio x. In-depth resolved measurements from layers with x≤0.57 show a strong inhibition in the relative...

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Bibliographic Details
Published in:Applied physics letters 2009-09, Vol.95 (12)
Main Authors: Fontané, X., Izquierdo-Roca, V., Calvo-Barrio, L., Álvarez-Garcia, J., Pérez-Rodríguez, A., Morante, J. R., Witte, W.
Format: Article
Language:English
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Summary:Raman scattering analysis of Cu-poor CuInSe2 layers shows the coexistence of the ordered vacancy compound (OVC), CuAu–CuInSe2 and chalcopyrite (CH) CuInSe2 phases as function of the Cu/In content ratio x. In-depth resolved measurements from layers with x≤0.57 show a strong inhibition in the relative intensity of the CH-CuInSe2 mode at the back region. Micro-Raman spectra directly measured at different regions from the layers with 0.66≤x≤0.71 also suggest a higher content of the OVC phase at this back region. These data suggest an enhancement in the formation of OVC at this region in the layers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3236770