Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature

Electric-double-layer effect is observed in mesoporous SiO 2 films deposited by plasma-enhanced chemical vapor deposition at room temperature. Room-temperature processed transparent InGaZnO 4 thin film transistors (TFTs) gated with such mesoporous SiO 2 dielectric show an ultralow operating voltage...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2009-10, Vol.95 (15), p.152114-152114-3
Main Authors: Jiang, Jie, Wan, Qing, Sun, Jia, Lu, Aixia
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electric-double-layer effect is observed in mesoporous SiO 2 films deposited by plasma-enhanced chemical vapor deposition at room temperature. Room-temperature processed transparent InGaZnO 4 thin film transistors (TFTs) gated with such mesoporous SiO 2 dielectric show an ultralow operating voltage of 1.0 V due to the large electric-double-layer capacitance. The InGaZnO 4 TFTs exhibit a good performance with a high field-effect mobility of 28.5   cm 2 / V s , a low subthreshold swing of 110 mV/decade, and a large on-off ratio of 1.1 × 10 6 , respectively. Such ultralow-voltage devices are very promising for low-power transparent macroelectronics on temperature-sensitive substrates.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3251782