Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale

Scanning tunneling microscopy was used to investigate the development of the InAs wetting layer on the GaAs(001)-c(4×4) surface. At low InAs coverages signatures of indium agglomerations form on the surface, before an abrupt change to a (4×3) reconstructed monolayer of In2/3Ga1/3As occurs at about 2...

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Bibliographic Details
Published in:Applied physics letters 2009-12, Vol.95 (23)
Main Authors: Grabowski, Jan, Prohl, Christopher, Höpfner, Britta, Dähne, Mario, Eisele, Holger
Format: Article
Language:English
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Summary:Scanning tunneling microscopy was used to investigate the development of the InAs wetting layer on the GaAs(001)-c(4×4) surface. At low InAs coverages signatures of indium agglomerations form on the surface, before an abrupt change to a (4×3) reconstructed monolayer of In2/3Ga1/3As occurs at about 2/3 ML of deposited InAs. Further indium deposition leads to a second layer with α2(2×4) and β2(2×4) structural units on the surface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3266865