Cross-tie shift register

• Published in: Journal of applied physics 1979-01, Vol.50 (B3), p.2295-2297
• Main Authors: Lo, D. S., Benrud, V. M., Cosimini, G. J., Johnson, L. H., Nelson, G. G., Paul, M. C., Torok, E. J.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.327031

The principle, design, fabrication and operating conditions of a shift register memory device using cross-tie wall structure in polycrystalline magnetic films will be described. This device is nonvolatile, silicon compatible and can be fabricated in a three mask level process. Each data track of this device consists of a stripline conductor, a 25 μm wide magnetic film data strip and single level data generator/propagator/detector circuitry. This is the first such device to incorporate a functioning generator, propagate circuit, and detector on a single level, thus greatly simplifying fabrication and increasing reliability and yield. A spatially varying magnetic field produced by the periodic wide/narrow propagate bias stripline is used in conjunction with the magnetic field produced by a uniform stripline to achieve propagation. Propagation is accomplished by generating cross-tie/Bloch line pairs and subsequently annihilating trailing pairs. Cross-tie shift registers have been fabricated on both glass and silicon substrates and have been tested.