Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film

The electronic structure of amorphous ZnO film (a-ZnO) was examined by O K- and Zn L3-edge x-ray absorption spectroscopy and valence band photoemission spectroscopy. Comparative studies of a-ZnO and a wurtzite ZnO (w-ZnO) revealed a decrease in Zn 4s-O 2p hybridization strength and the localization...

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Bibliographic Details
Published in:Applied physics letters 2009-12, Vol.95 (26)
Main Authors: Cho, Deok-Yong, Kim, Jeong Hwan, Song, Jaewon, Hwang, Cheol Seong, Park, Byeong-Gyu, Kim, Jae-Young, Min, Chul-Hee, Oh, Se-Jung
Format: Article
Language:English
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Summary:The electronic structure of amorphous ZnO film (a-ZnO) was examined by O K- and Zn L3-edge x-ray absorption spectroscopy and valence band photoemission spectroscopy. Comparative studies of a-ZnO and a wurtzite ZnO (w-ZnO) revealed a decrease in Zn 4s-O 2p hybridization strength and the localization of Zn 4s band as a consequence of local structural disorder, indicating limited electron hopping interactions in a-ZnO. The 0.1 eV higher Fermi-level of a-ZnO compared to w-ZnO suggests that the electrical properties of a-ZnO are different from those in w-ZnO due to structural disorder, even in the absence of impurities or grain boundaries.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3275738