I n   s i t u monitoring by ellipsometry of metalorganic epitaxy of GaAlAs-GaAs superlattice

I n situ ellipsometry has been used to monitor the growth of GaAs-GaAlAs superlattices by a metalorganic VPE process. The thickness and the regularity of the successive layers can thus be determined. Analysis of transition widths between successive layers is made and compared with results obtained b...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1980-03, Vol.51 (3), p.1599-1602
Main Authors: Hottier, F., Hallais, J., Simondet, F.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:I n situ ellipsometry has been used to monitor the growth of GaAs-GaAlAs superlattices by a metalorganic VPE process. The thickness and the regularity of the successive layers can thus be determined. Analysis of transition widths between successive layers is made and compared with results obtained by SIMS depth profiling.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.327815