Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

Self-assembled InGaAs quantum rings, embedded in a GaAs matrix, were investigated using magneto-capacitance-voltage spectroscopy. The magnetic-field dispersion of the charging energies exhibits characteristic features for both the first and second electron, which can be attributed to a ground state...

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Bibliographic Details
Published in:Applied physics letters 2010-01, Vol.96 (3), p.033111-033111-3
Main Authors: Lei, W., Notthoff, C., Lorke, A., Reuter, D., Wieck, A. D.
Format: Article
Language:English
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Summary:Self-assembled InGaAs quantum rings, embedded in a GaAs matrix, were investigated using magneto-capacitance-voltage spectroscopy. The magnetic-field dispersion of the charging energies exhibits characteristic features for both the first and second electron, which can be attributed to a ground state transition from l = 0 into l = − 1 , and a ground state transition from l = − 1 into l = − 2 , respectively. Furthermore, using a combination of capacitance-voltage spectroscopy and one-dimensional numerical simulations, the conduction band structure of these InGaAs quantum rings was determined.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3293445