A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

Large (>102) and stable resistance switching characteristics were demonstrated in TiN/SiO2/Fe structure due to the presence of a thin FeOx transition layer at the SiO2/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt...

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Bibliographic Details
Published in:Applied physics letters 2010-02, Vol.96 (5)
Main Authors: Feng, Li-Wei, Chang, Chun-Yen, Chang, Yao-Feng, Chen, Wei-Ren, Wang, Shin-Yuan, Chiang, Pei-Wei, Chang, Ting-Chang
Format: Article
Language:English
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Summary:Large (>102) and stable resistance switching characteristics were demonstrated in TiN/SiO2/Fe structure due to the presence of a thin FeOx transition layer at the SiO2/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO2/Fe0.73Pt0.27 structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeOx layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm’s law in low voltage region and Pool–Frenkel behavior in high voltage region, consisting with FeOx phase transition characteristics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3294632