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Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high-k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectrosc...

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Bibliographic Details
Published in:Applied physics letters 2010-01, Vol.96 (4)
Main Authors: Toyoda, S., Kamada, H., Tanimura, T., Kumigashira, H., Oshima, M., Ohtsuka, T., Hata, Y., Niwa, M.
Format: Article
Language:English
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Summary:We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high-k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high-k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3298355