Structural and electrical properties of ZnO nanorods and Ti buffer layers

Vertically-well-aligned ZnO nanorods were synthesized on Ti buffer layers by a metal-organic chemical-vapor deposition process. Structural analyses demonstrated that the ZnO nanorods were well-aligned in the c -axis and a b -plane. Transmission electron microscopy (TEM) showed that the Ti buffer lay...

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Bibliographic Details
Published in:Applied physics letters 2010-02, Vol.96 (5), p.051908-051908-3
Main Authors: Kwak, C.-H., Kim, B.-H., Park, C.-I., Seo, S.-Y., Kim, S.-H., Han, S.-W.
Format: Article
Language:English
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Summary:Vertically-well-aligned ZnO nanorods were synthesized on Ti buffer layers by a metal-organic chemical-vapor deposition process. Structural analyses demonstrated that the ZnO nanorods were well-aligned in the c -axis and a b -plane. Transmission electron microscopy (TEM) showed that the Ti buffer layer was amorphous and interdiffused into the ZnO nanorods. Energy-dispersive spectroscopy (EDS) analysis revealed the Ti buffer layers to be slightly oxide. Extended x-ray absorption fine structure confirmed the TEM and EDS results. The I-V characteristic measurements showed a 20-fold increase in current density with the Ti buffer layer, suggesting excellent electrical contact between the Ti buffer layer and ZnO nanorods.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3308498