Traps at the Al2O3/CdSe interface

The effect of traps at the Al2O3/CdSe interface on thin-film transistors (TFT’s) is experimentally measured and mathematically modelled. These traps are shown to lead to a decay of the ON current with time which has a t−αkT behavior for the first msec, decreases to log t for about 20 sec, and then s...

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Bibliographic Details
Published in:Journal of applied physics 1982-07, Vol.53 (7), p.5294-5303
Main Authors: Freeman, E. C., Luo, F.-C.
Format: Article
Language:English
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Summary:The effect of traps at the Al2O3/CdSe interface on thin-film transistors (TFT’s) is experimentally measured and mathematically modelled. These traps are shown to lead to a decay of the ON current with time which has a t−αkT behavior for the first msec, decreases to log t for about 20 sec, and then saturates. The OFF current increases with log2 t for as much as 200 h before saturating. Capacitance and conductance measurements are reported which characterize the fast and slow states. The temperature dependence of the drift in the TFT characteristics is presented. A model for the origin of the fast and slow states at and near the Al2O3/CdSe interface is developed. It is then shown how the presence of the fast traps improves TFT characteristics for application in a liquid crystal flat panel display.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.331366