Charge sensing in intrinsic silicon quantum dots

We report charge sensing measurements on a silicon quantum dot with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charg...

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Bibliographic Details
Published in:Applied physics letters 2010-02, Vol.96 (8), p.082104-082104-3
Main Authors: Podd, G. J., Angus, S. J., Williams, D. A., Ferguson, A. J.
Format: Article
Language:English
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Summary:We report charge sensing measurements on a silicon quantum dot with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2 e . These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3318463