New insights on the reversal of the site of electromigration failure in gold films doped with alkali

• Published in: Journal of applied physics 1983-01, Vol.54 (5), p.2855-2856
• Main Authors: HUMMEL, R. E, MATTS-GOHO, S, DE HOFF, R. T
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffusion in solids; Diffusion of impurities; Exact sciences and technology; Materials science; Metals, semimetals and alloys; Other nonelectronic physical properties; Physical properties of thin films, nonelectronic; Physics; Specific materials; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Transport properties of condensed matter (nonelectronic)
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.332278

The description of current-induced failures in thin film metallizations used in microelectronic devices should not be limited to electron wind arguments. Several failure mechanisms such as grain boundary grooving, thermotransport and electrotransport, may contribute to matter transport under conditions normally encountered in service. Grain boundary grooving is accelerated by doping thin gold films with alkali ions. Pure thin gold stripes which are subjected to a direct current of high density fail near the cathode, whereas similar gold films doped with alkali ions fail near the anode. Experiments utilizing Auger electron spectroscopy show an enrichment of alkali metal near the anode after current stressing. The accumulation of alkali metal at the anode promotes grain boundary grooving and void formation there.