Interfacial effects due to tunneling to insulator gap states in amorphous carbon on silicon metal-insulator-semiconductor structures

ac conductance and capacitance measurements over the range 10 Hz to 10 MHz for amorphous carbon on silicon metal-insulator-semiconductor structures are reported. Data can be interpreted as being due to tunneling of electrons into gap states located in the dielectric. Interface state densities as low...

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Bibliographic Details
Published in:Journal of applied physics 1984-01, Vol.55 (12), p.4299-4303
Main Authors: AZIM KHAN, A, WOOLLAM, J. A, CHUNG, Y
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:ac conductance and capacitance measurements over the range 10 Hz to 10 MHz for amorphous carbon on silicon metal-insulator-semiconductor structures are reported. Data can be interpreted as being due to tunneling of electrons into gap states located in the dielectric. Interface state densities as low as 1.3×1010 eV cm2 are found.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.333040