Small-signal charge transport in Schottky-barrier punch-through devices

Small-signal charge-transport properties of Schottky-barrier punch-through injection and transit-time structures are theoretically investigated. A numerical model of the structure which considers carrier diffusion, realistic dependence of carrier velocity upon electric field and doping density, and...

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Bibliographic Details
Published in:Journal of applied physics 1984-01, Vol.55 (2), p.571-578
Main Author: EL-GABALY, M
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Small-signal charge-transport properties of Schottky-barrier punch-through injection and transit-time structures are theoretically investigated. A numerical model of the structure which considers carrier diffusion, realistic dependence of carrier velocity upon electric field and doping density, and nonequilibrium carrier injection over the forward-biased metal-semiconductor contact is formulated. This model predicts accurately the experimental small-signal behavior of the device and determines quantitatively the validity of various simplifying assumptions used in existing theories. Based on the present study, an improved analytical model for the device is suggested and its validity and limitations are identified. Also, the difference in the small-signal performance between Schottky-barrier and p-n junction devices is explained.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.333065