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Physical and electrical characteristics of the high-k Ta2O5 (tantalum pentoxide) dielectric deposited on the polycrystalline silicon
The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different postrapid thermal annealing temperatures were formed as high-k interdielectrics. Physical and electrical characteristics of the Ta2O5 dielectrics were investigated with x-ray diffraction, x-ray photoelectron spect...
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Published in: | Applied physics letters 2010-03, Vol.96 (11) |
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container_title | Applied physics letters |
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creator | Kao, Chyuan-Haur Chen, Hsiang Chiu, Jing Sing Chen, Kung Shao Pan, Yu Tsung |
description | The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different postrapid thermal annealing temperatures were formed as high-k interdielectrics. Physical and electrical characteristics of the Ta2O5 dielectrics were investigated with x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and electrical analysis. The annealing at 800 °C was found to be the optimal condition to reduce the defects and interface traps existed in the interface between the Ta2O5 dielectric and polysilicon to fabricate a well-crystallized film with higher breakdown field, lower leakage current and smaller charge trapping rate. This Ta2O5 dielectric shows promise for future generation of nonvolatile memory. |
doi_str_mv | 10.1063/1.3334725 |
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title | Physical and electrical characteristics of the high-k Ta2O5 (tantalum pentoxide) dielectric deposited on the polycrystalline silicon |
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