Electric-field-modulated, infrared internal-reflection study of the silicon-electrolyte interface

The electric-field modulation of the internal-reflection response of a Si-electrolyte interface is shown to give information both about accumulation of free carriers, interface states, and about molecular species in the oxide or in the Helmholtz or Gouy layer. Measurements were made in either a 0.1-...

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Bibliographic Details
Published in:Journal of applied physics 1984-01, Vol.56 (3), p.843-849
Main Authors: PALIK, E. D, HOLM, R. T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The electric-field modulation of the internal-reflection response of a Si-electrolyte interface is shown to give information both about accumulation of free carriers, interface states, and about molecular species in the oxide or in the Helmholtz or Gouy layer. Measurements were made in either a 0.1-M KOH or 0.1-M H2SO4 solution and evidence of electromodulation of vibration bands of H3O+, OH, and H2O was obtained.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.334019