Low temperature germanium to silicon direct wafer bonding using free radical exposure

A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of an...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2010-03, Vol.96 (10), p.102110-102110-3
Main Authors: Byun, Ki Yeol, Ferain, Isabelle, Fleming, Pete, Morris, Michael, Goorsky, Mark, Colinge, Cindy
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 ° C , advanced imaging techniques were used to characterize the bonded interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3360201