Measurement of the electron density and the attachment rate coefficient in silane/helium discharges

Measurements of the electron density in dc and pulsed silane/helium discharges show that the addition of silane to the gas mixture causes a large reduction in the electron density. By monitoring the electron decay time in the afterglow, it is found that the dominant electron loss mechanism in silane...

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Bibliographic Details
Published in:Journal of applied physics 1985-08, Vol.58 (3), p.1344-1348
Main Authors: FLEDDERMANN, C. B, BEBERMAN, J. H, VERDEYENM, J. T
Format: Article
Language:English
Subjects:
Electric discharges
Exact sciences and technology
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
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Summary:Measurements of the electron density in dc and pulsed silane/helium discharges show that the addition of silane to the gas mixture causes a large reduction in the electron density. By monitoring the electron decay time in the afterglow, it is found that the dominant electron loss mechanism in silane/helium is not ambipolar diffusion to the walls, but instead is a volumetric loss process, most likely dissociative attachment of electrons to a product of the silane dissociation. A lower bound for the rate coefficient for this loss process has been determined to be 2.65×10−10 cm3/sec.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.336105