Temperature dependence of spontaneous emission from AlGaAs-GaAs laser diodes

The relationship between spontaneous and stimulated emission from a variety of AlGaAs-GaAs double-heterostructure laser diodes has been studied as a function of temperature over a range of 10–70 °C. The spontaneous emission varied exponentially with temperature, and we introduce T′0(J) as the charac...

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Bibliographic Details
Published in:Journal of applied physics 1986-04, Vol.59 (7), p.2293-2296
Main Authors: ZABROWSKI, D. W, RICE, R. R, SPECHT, A. P
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Other techniques and industries
Physics
Semiconductor lasers
laser diodes
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Summary:The relationship between spontaneous and stimulated emission from a variety of AlGaAs-GaAs double-heterostructure laser diodes has been studied as a function of temperature over a range of 10–70 °C. The spontaneous emission varied exponentially with temperature, and we introduce T′0(J) as the characteristic temperature of spontaneous emission. As the temperature was changed, the laser threshold and slope efficiency for a device strongly covaried with spontaneous emission. A moderately high correlation (r>0.75) was obtained between the lasing and spontaneous emission slope efficiencies of 20 randomly selected lasers from different suppliers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.336325