Interface plasma excitations in step p-n junctions

Localized interface plasma modes in  p-n junctions are studied by applying a hydrodynamic model taking full retardation effects into account. Using a Shockley model of the  p-n junction, the problem is analogous to that of an electron plasma and a hole plasma separated by a depletion region. The dis...

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Bibliographic Details
Published in:Journal of applied physics 1986-07, Vol.60 (1), p.291-295
Main Authors: PIMPALE, A, PARANJAPE, B. V
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Localized interface plasma modes in  p-n junctions are studied by applying a hydrodynamic model taking full retardation effects into account. Using a Shockley model of the  p-n junction, the problem is analogous to that of an electron plasma and a hole plasma separated by a depletion region. The dispersion relation for the localized modes is obtained by using the continuity conditions for the electric and magnetic fields at the boundaries of the depletion region. The low-frequency plasma mode in the electrostatic limit has a dispersion relation ω≂(kW)1/2ωp for long wavelengths. It is shown that this mode does not couple with the electromagnetic radiation. These modes can interact with ultrasound and possible experiments are suggested. The maximum sound frequency that can be absorbed by this plasma mode is obtained. For sound waves below this maximum frequency absorption can occur at a particular angle of incidence of the sound wave. Typical numerical results have been given for the case of silicon.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.337643