Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

We have evaluated the long-term electrical reliability of GaN/AlGaN high-electron-mobility transistors grown under Ga-rich, N-rich, and NH 3 -rich conditions. V pinch-off shifts positively after stress for devices grown under Ga-rich and N-rich conditions, while it shifts negatively for NH 3 -rich d...

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Bibliographic Details
Published in:Applied physics letters 2010-03, Vol.96 (13), p.133503-133503-3
Main Authors: Roy, T., Puzyrev, Y. S., Tuttle, B. R., Fleetwood, D. M., Schrimpf, R. D., Brown, D. F., Mishra, U. K., Pantelides, S. T.
Format: Article
Language:English
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Summary:We have evaluated the long-term electrical reliability of GaN/AlGaN high-electron-mobility transistors grown under Ga-rich, N-rich, and NH 3 -rich conditions. V pinch-off shifts positively after stress for devices grown under Ga-rich and N-rich conditions, while it shifts negatively for NH 3 -rich devices. Density functional theory calculations suggest that the hot-electron-induced release of hydrogen from hydrogenated Ga-vacancies is primarily responsible for the degradation of devices grown in Ga-rich and N-rich conditions, while hydrogenated N-antisites are the dominant defects causing degradation in devices grown under NH 3 -rich conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3377004