Very low-threshold V-channeled substrate inner stripe lasers using high-resistive Al0.85Ga0.15As burying layer

A new V-channeled substrate inner stripe laser with a very low-current threshold has been devloped using a high-resistive Al0.85Ga0.15As burying layer. An optical waveguide is formed by making use of a V channel on the substrate in the mesa. Very low-current thresholds (Ith=10–15 mA, Jth=1 kA/cm2) a...

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Bibliographic Details
Published in:Journal of applied physics 1987-04, Vol.61 (8), p.3108-3110
Main Authors: Yamamoto, Saburo, Hijikata, Toshiki
Format: Article
Language:English
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Summary:A new V-channeled substrate inner stripe laser with a very low-current threshold has been devloped using a high-resistive Al0.85Ga0.15As burying layer. An optical waveguide is formed by making use of a V channel on the substrate in the mesa. Very low-current thresholds (Ith=10–15 mA, Jth=1 kA/cm2) and stable fundamental transverse mode operation up to 30 mW are achieved even for the structure with broad active-layer widths (5–6 μm). Little degradation is observed over 3000 h at 50 °C.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.337812