Analysis of periodic dislocation networks using x-ray diffraction and extended finite element modeling

We combine the extended finite element method with simulations of diffracted x-ray intensities to investigate the diffusely scattered intensity due to dislocations. As a model system a thin PbSe epitaxial layer grown on top of a PbTe buffer on a CdTe substrate was chosen. The PbSe film shows a perio...

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Bibliographic Details
Published in:Applied physics letters 2010-03, Vol.96 (13), p.131905-131905-3
Main Authors: Wintersberger, E., Hrauda, N., Kriegner, D., Keplinger, M., Springholz, G., Stangl, J., Bauer, G., Oswald, J., Belytschko, T., Deiter, C., Bertram, F., Seeck, O. H.
Format: Article
Language:English
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Summary:We combine the extended finite element method with simulations of diffracted x-ray intensities to investigate the diffusely scattered intensity due to dislocations. As a model system a thin PbSe epitaxial layer grown on top of a PbTe buffer on a CdTe substrate was chosen. The PbSe film shows a periodic dislocation network where the dislocations run along the orthogonal ⟨ 110 ⟩ directions. The array of dislocations within this layer can be described by a short range order model with a narrow distribution.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3379298