Composition dependence of band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100)

Composition-dependent band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100) have been investigated. It was found with increasing Ti content, the band gap and band offsets (ΔEv and ΔEc) of Hf1−xTixO2 films against Si all decrease and the optimal Ti content in the films should b...

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Bibliographic Details
Published in:Journal of applied physics 2010-05, Vol.107 (10)
Main Authors: Ye, Cong, Wang, Hao, Zhang, Jun, Ye, Yun, Wang, Yi, Wang, Baoyuan, Jin, Yingchun
Format: Article
Language:English
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Summary:Composition-dependent band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100) have been investigated. It was found with increasing Ti content, the band gap and band offsets (ΔEv and ΔEc) of Hf1−xTixO2 films against Si all decrease and the optimal Ti content in the films should be no higher than 21%, at which ΔEc is 1.06 eV. The dielectric constant of the films not only can increase up to 31.3, but show a linear increase with increasing TiO2 content. Compared with HfO2 thin film with similar equivalent oxide thickness, low leakage currents were obtained.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3380588