Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact

The solid-state reactions between (100) GaAs substrates and Rh films ∼150 Å and ∼600 Å thick, annealed at temperatures between 300 and 800 °C, are investigated with conventional and heavy ion Rutherford backscattering spectrometry, and x-ray diffraction. Initiation of interface reactions between the...

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Bibliographic Details
Published in:Journal of applied physics 1987-02, Vol.61 (3), p.1099-1102
Main Authors: KIN MAN YU, CHEUNG, S. K, SANDS, T, JAKLEVIC, J. M, HALLER, E. E
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The solid-state reactions between (100) GaAs substrates and Rh films ∼150 Å and ∼600 Å thick, annealed at temperatures between 300 and 800 °C, are investigated with conventional and heavy ion Rutherford backscattering spectrometry, and x-ray diffraction. Initiation of interface reactions between the Rh films and the GaAs substrate is observed at ∼300 °C. Laterally segregated RhGa, RhAs, and RhAs2 phases are detected for the 150-Å Rh/GaAs contact annealed in the temperature range of 300–700 °C. For thick Rh film (∼600 Å) on GaAs, vertical phase separation between the RhGa and the Rh-As phases is observed after annealing. After annealing at 700 °C for 20 min, the reaction between the 600-Å Rh film and GaAs is complete and a layer sequence of RhGa/RhAs2/GaAs results. Electrical properties of Rh/n-GaAs diodes are measured using the current voltage dependence. A correlation between the electrical behavior and the metallurgical reaction is observed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.338205