Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant

We used pulse bias temperature instability measurements to investigate the energy distributions of fast charge trapping sources to understand the origin of fast charge traps in an HfO2 device. The trap energy level was extracted using a trap-to-band tunneling model by changing the measurement delay...

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Bibliographic Details
Published in:Applied physics letters 2010-04, Vol.96 (14)
Main Authors: Jo, Minseok, Kim, Seonghyun, Lee, Joonmyoung, Jung, Seungjae, Park, Ju-Bong, Jung, Hyung-Suk, Choi, Rino, Hwang, Hyunsang
Format: Article
Language:English
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Summary:We used pulse bias temperature instability measurements to investigate the energy distributions of fast charge trapping sources to understand the origin of fast charge traps in an HfO2 device. The trap energy level was extracted using a trap-to-band tunneling model by changing the measurement delay time. The fast electron traps in an n-channel metal oxide semiconductor field effect transistors (MOSFET) exist in a 1 eV range below the bottom of the HfO2 conduction band. In the case of a p-channel MOSFET, the fast hole traps exist in the range 1–2 eV above the top of the HfO2 valence band, which could be attributed to a formation of negatively charged NO defects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3384999