Co/GaAs interfacial reactions

The reactions of metals with GaAs are substantially more complex than comparable metal-silicon systems. In this paper, phase formation in the Co-GaAs system is examined in detail and contrasted with other metal-GaAs and metal-silicon systems. Both elemental and microstructural characterization techn...

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Bibliographic Details
Published in:Journal of applied physics 1987-11, Vol.62 (9), p.3755-3762
Main Authors: PALMSTRØM, C. J, CHANG, C. C, YU, A, GALVIN, G. J, MAYER, J. W
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals, semimetals and alloys
Metals. Metallurgy
Physics
Solid surfaces and solid-solid interfaces
Specific materials
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:The reactions of metals with GaAs are substantially more complex than comparable metal-silicon systems. In this paper, phase formation in the Co-GaAs system is examined in detail and contrasted with other metal-GaAs and metal-silicon systems. Both elemental and microstructural characterization techniques are used, and the limitations of each are discussed. Cobalt begins to react with GaAs at 375 °C and initially forms a ternary phase of approximate composition, Co2GaAs. Subsequent reactions or higher-temperature annealing results in the formation of binary phases CoGa and CoAs. The observed phase formation is controlled by the species with the largest diffusion coefficient, and this species is determined by the temperature. At sufficiently high annealing temperatures, arsenic is lost from the surface, and an epitaxial CoGa phase is formed on the GaAs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.339239