Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II: Epitaxial quality

Argon-ion bombardment has been optimized as a method to clean silicon substrates prior to epitaxial deposition at low temperatures (750 °C) and very low pressures (

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Bibliographic Details
Published in:Journal of applied physics 1987-10, Vol.62 (8), p.3398-3404
Main Authors: GARVERICK, L. M, COMFORT, J. H, YEW, T. R, REIF, R, BAIOCCHI, F. A, LUFTMAN, H. S
Format: Article
Language:English
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Summary:Argon-ion bombardment has been optimized as a method to clean silicon substrates prior to epitaxial deposition at low temperatures (750 °C) and very low pressures (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.339302