Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II: Epitaxial quality
Argon-ion bombardment has been optimized as a method to clean silicon substrates prior to epitaxial deposition at low temperatures (750 °C) and very low pressures (
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Published in: | Journal of applied physics 1987-10, Vol.62 (8), p.3398-3404 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Argon-ion bombardment has been optimized as a method to clean silicon substrates prior to epitaxial deposition at low temperatures (750 °C) and very low pressures ( |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.339302 |