Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

We report experimental and theoretical studies of defects producing fixed charge within Al 2 O 3 layers grown by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As ( 001 ) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt / ALD-Al 2 O 3 / n-...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2010-04, Vol.96 (15), p.152908-152908-3
Main Authors: Shin, Byungha, Weber, Justin R., Long, Rathnait D., Hurley, Paul K., Van de Walle, Chris G., McIntyre, Paul C.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report experimental and theoretical studies of defects producing fixed charge within Al 2 O 3 layers grown by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As ( 001 ) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt / ALD-Al 2 O 3 / n-In 0.53 Ga 0.47 As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al 2 O 3 . We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al 2 O 3 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3399776