Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy

• Published in: Journal of applied physics 1988-01, Vol.63 (2), p.400-403
• Main Authors: PRASEUTH, J. P, JONCOUR, M. C, GERARD, J. M, HENOC, P, QUILLEC, M
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vacuum deposition
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.340252

We present a complete investigation of crystalline, optical, and electrical properties of molecular-beam-epitaxial-grown AlGaInAs lattice matched to InP covering the whole range of concentrations. Using the two indium cells method, we show very easy control of lattice matching of this quaternary system which can be written as (Al0.48In0.52As)z(Ga0.47In0.53As)1−z. X-ray double diffraction profiles do not depend on the Al concentration and they show sharp diffraction linewidth. The PL full widths at half maximum are comparable to the narrowest reported. Transmission electron microscopy shows excellent crystallinity for z up to 0.60. Room-temperature electron mobility higher than 4000 cm2/V s for z up to 0.40 is comparable to that of InP and is the best result reported up to now for these quaternary alloys. This system is thus quite suitable for microwave and optical devices applications.