Optical investigations of ion implant damage in silicon

Ion implantation damage in silicon has been studied utilizing a new optical technique (differential reflectometry). It has been demonstrated that differential reflectometry can be used to identify whether an implanted layer is crystalline, damaged crystalline, or amorphous. The intensity of interban...

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Bibliographic Details
Published in:Journal of applied physics 1988-04, Vol.63 (8), p.2591-2594
Main Authors: HUMMEL, R. E, XI, W, HOLLOWAY, P. H, JONES, K. A
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
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Summary:Ion implantation damage in silicon has been studied utilizing a new optical technique (differential reflectometry). It has been demonstrated that differential reflectometry can be used to identify whether an implanted layer is crystalline, damaged crystalline, or amorphous. The intensity of interband transitions can be used to determine the thickness of a damaged crystalline layer over a submerged amorphous layer. Interference effects were utilized to determine the thickness of an amorphous layer. Thus, differential optical reflectance has far-reaching potential for characterizing implanted substrates.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.340996