Back bias effects on two-dimensional electron gas

A new technique is described to study heterostructure field-effect transistors. This technique is based on the application of an electric field perpendicular to the channel via a p-doped substrate. The measurements demonstrate that the centroid of the two-dimensional electron gas resides approximate...

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Bibliographic Details
Published in:Journal of applied physics 1988-02, Vol.63 (4), p.1121-1125
Main Authors: SCHUERMEYER, F. L, GRZYB, J. A, CURTIS, M. J, PAULUS, M. J, CHENEY, M. E
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A new technique is described to study heterostructure field-effect transistors. This technique is based on the application of an electric field perpendicular to the channel via a p-doped substrate. The measurements demonstrate that the centroid of the two-dimensional electron gas resides approximately 10 nm below the heterointerface and that application of a negative substrate potential increases the confinement of these charges towards the interface. A negative substrate voltage decreases the K′ factor of the transistor and also reduces the well capacity. Capacitance voltage measurements confirm that a parasitic channel in the donor layer can be formed and that it is shielded from the substrate by the two-dimensional electron gas.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.341123