Doping dependence of the specific contact resistance of NiSi2 on (100) n-Si

Nickel disilicide (NiSi2 ) was formed on (100) oriented n-type Si-molecular beam epitaxial layers (Si-MBE) of various doping levels between 2×1016 and 13×1018 cm−3 and on substrates of 2×1019 cm−3 . Very low contact resistances were found and a low Schottky barrier of φBn =0.49 V was derived. A comp...

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Bibliographic Details
Published in:Journal of applied physics 1988-10, Vol.64 (7), p.3748-3749
Main Authors: SASSE, E, KÖNIG, U
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface double layers, schottky barriers, and work functions
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Summary:Nickel disilicide (NiSi2 ) was formed on (100) oriented n-type Si-molecular beam epitaxial layers (Si-MBE) of various doping levels between 2×1016 and 13×1018 cm−3 and on substrates of 2×1019 cm−3 . Very low contact resistances were found and a low Schottky barrier of φBn =0.49 V was derived. A comparison with other commonly used contact materials shows NiSi2 to be highly favorable in this doping range.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.341375