Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potentia...

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Bibliographic Details
Published in:Applied physics letters 2010-04, Vol.96 (16), p.163506-163506-3
Main Authors: Kim, Gun Hee, Jeong, Woong Hee, Du Ahn, Byung, Shin, Hyun Soo, Kim, Hee Jin, Kim, Hyun Jae, Ryu, Myung-Kwan, Park, Kyung-Bae, Seon, Jong-Baek, Lee, Sang-Yoon
Format: Article
Language:English
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Summary:We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, E opt , when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in E opt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3413939