Oxygen incorporation in molecular-beam epitaxial silicon doped using a boric oxide source

Oxygen incorporation in epitaxial silicon produced by molecular-beam epitaxy and boron doped by coevaporation of boric oxide has been investigated. The concentration of oxygen in the deposited layers was measured using secondary-ion mass spectrometry and shown to depend on a number of growth paramet...

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Bibliographic Details
Published in:Journal of applied physics 1988-09, Vol.64 (5), p.2751-2754
Main Authors: TUPPEN, C. G, PRIOR, K. A, GIBBINGS, C. J, HOUGHTON, D. C, JACKMAN, T. E
Format: Article
Language:English
Subjects:
Chemistry
Exact sciences and technology
Inorganic chemistry and origins of life
Kinetics and mechanism of reactions
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Summary:Oxygen incorporation in epitaxial silicon produced by molecular-beam epitaxy and boron doped by coevaporation of boric oxide has been investigated. The concentration of oxygen in the deposited layers was measured using secondary-ion mass spectrometry and shown to depend on a number of growth parameters. A reaction mechanism is proposed and is quantitatively modeled using a thermodynamic approach. A simple expression is given for determining the onset of oxygen incorporation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.341619