Comment on ‘‘Carrier concentration and activation energy in heavily donor-doped silicon’’ [J. Appl. Phys. 6 1 , 591 (1987)]

The present comment discusses some aspects of a recent analysis by Schechter of relative agreement between two theories and data in the heavy doping range. It is pointed out that this analysis uses an earlier theory of mine beyond its validity range, and that within its validity range the agreement...

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Bibliographic Details
Published in:Journal of applied physics 1988-07, Vol.64 (2), p.931-933
Main Author: Neumark, G. F.
Format: Article
Language:English
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Summary:The present comment discusses some aspects of a recent analysis by Schechter of relative agreement between two theories and data in the heavy doping range. It is pointed out that this analysis uses an earlier theory of mine beyond its validity range, and that within its validity range the agreement given by my theory is fully as good as that of the other one (by Lee and McGill). It is pointed out that to select the better of the two theories, an examination of the respective physical assumptions seems called for. A comparison which summarizes differences in these assumptions is given, and highlights the necessity for further detailed work for a determination of the best set of assumptions.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.341896