Noise equivalent power calculation: application to Ga0.96Al0.04Sb avalanche photodiodes

This paper presents a general method of calculation, allowing us to deduce the noise equivalent power in any type of avalanche photodiode. This method is checked by comparing numerical and analytical results for the case of a p-i-n junction. The calculation is applied to some Ga0.96Al0.04Sb diodes i...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1988-12, Vol.64 (11), p.6541-6545
Main Authors: LUQUET, H, GOUSKOV, L, PEROTIN, M, JEAN, A, MAGALLON, D, LAHBABI, M, BOUGNOT, G
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a general method of calculation, allowing us to deduce the noise equivalent power in any type of avalanche photodiode. This method is checked by comparing numerical and analytical results for the case of a p-i-n junction. The calculation is applied to some Ga0.96Al0.04Sb diodes in order to estimate their performance and to deduce some trends for their optimization.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.342049