Electromigration early-failure distribution

This work investigates the functional form of the electromigration early-failure distribution in thin Al-1% Si metal films. In a very-large-scale experiment with 28 320 packaged samples, an early-failure group was identified and found to correspond to a log-normal distribution, but with a larger dis...

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Bibliographic Details
Published in:Journal of applied physics 1989-02, Vol.65 (3), p.1044-1047
Main Authors: HOANG, H. H, NIKKEL, E. L, MCDAVID, J. M, MACNAUGHTON, R. B
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:This work investigates the functional form of the electromigration early-failure distribution in thin Al-1% Si metal films. In a very-large-scale experiment with 28 320 packaged samples, an early-failure group was identified and found to correspond to a log-normal distribution, but with a larger dispersion than that which was typical of the primary, or wear-out, distribution. The total distribution for the failures is approximately bimodal, with the more disperse background distribution dominating at early times. Scanning electron micrographs were obtained to characterize the typical failure mode, which had the same appearance for both groups. Evidence for a test-condition stress-level effect on the form of the accelerated lifetime distribution is also presented.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.343038