Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon

The carrier lifetime in boron-doped Czochralski-grown silicon is ultimately limited by light-induced boron-oxygen-related recombination centers. These centers can be permanently deactivated by illumination at elevated temperature ( 70 - 220 ° C ) . However, the detailed defect reactions leading to p...

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Published in:Journal of applied physics 2010-06, Vol.107 (12), p.123707-123707-4
Main Authors: Lim, Bianca, Bothe, Karsten, Schmidt, Jan
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description The carrier lifetime in boron-doped Czochralski-grown silicon is ultimately limited by light-induced boron-oxygen-related recombination centers. These centers can be permanently deactivated by illumination at elevated temperature ( 70 - 220 ° C ) . However, the detailed defect reactions leading to permanent deactivation are still unresolved. In this work, we study the impact of oxygen on the deactivation process. We examine the dependence of the deactivation rate on the interstitial oxygen concentration as well as the impact of long-term annealing at 450 ° C , leading to the generation of oxygen clusters acting as donors (thermal donors). We find a decrease in the deactivation rate with both increasing interstitial oxygen concentration and increasing thermal donor concentration, suggesting that oxygen is involved in the deactivation process.
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title Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon
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