Epitaxial growth of ZnTe on GaSb(100) by rf sputtering

• Published in: Journal of applied physics 1989-07, Vol.66 (2), p.896-899
• Main Authors: TOKUMITSU, Y, KAWABUCHI, A, KITAYAMA, H, IMURA, T, OSAKA, Y, NISHIYAMA, F
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.343517

Zinc telluride is deposited by rf sputtering on the clean surface of well lattice-matched GaSb(100) substrates (with mismatch about 0.1%). The surface native oxides have been etched off by H2 plasma treatment at substrate temperatures of more than 220 °C. Reflection high-energy electron diffraction patterns of ZnTe films prepared at 320 °C are streaked with (100) characteristics, which shows that the deposited layers are grown epitaxially. The crystalline quality of the ZnTe films which depends on the substrate temperature is evaluated by means of the optical reflectance. The peak height of the second-derivative reflectance spectra, a measure of the crystalline quality, steeply increases at deposition temperatures of 270–320 °C. The deposition temperature of more than 320 °C is needed for high crystalline quality. Moreover, the film prepared at 370 °C on GaSb gives a minimum aligned yield χmin of 8% in ion beam channeling experiments of Rutherford backscattering spectrometry.