Band-gap narrowing in highly doped n- and p-type GaAs studied by photoluminescence spectroscopy

Band-gap narrowing of GaAs as a function of doping concentration has been measured using photoluminescence spectroscopy on samples grown by molecular beam epitaxy. Both n- (Si) and p- (Be) doped samples with concentrations varying from 3×1017 to 3×1018 cm−3 have been measured. The experimental resul...

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Bibliographic Details
Published in:Journal of applied physics 1989-11, Vol.66 (9), p.4381-4386
Main Authors: BORGHS, G, BHATTACHARYYA, K, DENEFFE, K, VAN MIEGHEM, P, MERTENS, R
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Band-gap narrowing of GaAs as a function of doping concentration has been measured using photoluminescence spectroscopy on samples grown by molecular beam epitaxy. Both n- (Si) and p- (Be) doped samples with concentrations varying from 3×1017 to 3×1018 cm−3 have been measured. The experimental results obtained from a line-shape analysis of the spectra taking tailing effects into account are in good agreement with recent theoretical calculations. A simple expression for the band-gap narrowing as a function of concentration for both n-and p-doped GaAs is given.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.343958