Evaluating luminescence based voltage images of silicon solar cells

• Published in: Journal of applied physics 2010-07, Vol.108 (1), p.014501-014501-5
• Main Authors: Glatthaar, M., Haunschild, J., Zeidler, R., Demant, M., Greulich, J., Michl, B., Warta, W., Rein, S., Preu, R.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.3443438

In this paper we give a mathematical derivation of how luminescence images of silicon solar cells can be calibrated to local junction voltage. We compare two different models to extract spatially resolved physical cell parameters from voltage images. The first model is the terminal connected diode model, where each pixel is regarded as a diode with a certain dark saturation current, which is connected via a series resistance with the terminal. This model is frequently used to evaluate measurement data of several measurement techniques with respect to local series resistance. The second model is the interconnected diode model, where the diode on one pixel is connected with the neighbor diodes via a sheet resistance. For each model parameter at least one image is required for a coupled determination of the parameters. We elaborate how also the voltage calibration can be added as an unknown parameter into the models, and how the resulting system of equations can be solved analytically. Finally the application of the models and the different ways of voltage calibration are compared experimentally.